Nanoscience and Nanotechnology Faculty
John D. Cressler
College of Engineering
School of Electrical and Computer Engineering
NanoTECH Research Area Affiliations
Cressler’s research focus is in the area of novel high-speed semiconductor devices and circuits constructed using atomic-scale engineering with silicon-germanium alloys. Such bandgap-engineered SiGe heterojunction bipolar transistors (SiGe HBTs) employ epitaxial SiGe strained layers to attain extreme levels of device performance (> 300 GHz frequency response), while maintaining strict fabrication compatibility with conventional Si-based manufacturing techniques and its compelling economy-of-scale. Such devices are being pursued globally for a host of applications in both current and future generation broadband communications systems.
Cressler’s Research Team Home Page
The Georgia Electronic Design Center